Storage temperature v cer v ces v ceo vebo ic icp ib p c t j t stg45601004560100456080511. Bc635 datasheet, equivalent, cross reference search. Npn silicon af transistors high current gain high collector current 3. Free devices maximum ratings rating symbol value unit collector. Bc635 637639 npn epitaxial silicon transistor created date. Collectorbase breakdown voltage bf721 v brcbo300 v i c10a, i e0 collectoremitter breakdown voltage bf721 v brceo300 v i c1ma, i b0 emitterbase. Bc635637pcicpcipmc time and frequency processor revision k users guide 85000096 october, 2003. Symmetricoms bc635637pmc receiver module provides precision time and frequency reference to the host computer system and peripheral data acquisition systems. Data sheet pure storage flasharrayx accelerate core applications and provide a modern data experience. C unless specified otherwise description symbol test condition max unit dc current gain h fe v ce2v, i c5ma v ce2v, i c150ma bc635bc636 250 bc637bc638 160 bc639bc640 160 group10 160 group16 250 v ce2v. The nellcor pulse oximetry system with oximax technology establishes a new milestone in patient safety monitoring that can impact clinical settings from the everyday to the extraordinary. We have engaged in the electronic components industry over 10 years. Bc635d bc635, bc637, bc639, bc63916 high current transistors npn silicon maximum ratings rating symbol value unit collectoremitter voltage bc635 bc637 bc639 vceo 45 60 80 vdc collectorbase voltage bc635.
Bc635 datasheet pdf pinout npn silicon epitaxial planar. Npn silicon af transistors high current gain high collector current 2. Bc639 npn medium power transistors product specification 2001 oct. Npn silicon af transistors bc 635 datasheet catalog. A key feature of the bc635pcie is the ability to generate interrupts on the pci bus at programmable rates. Quick reference data symbol parameter conditions min typ max unit. Datasheet identification product status definition advance information preliminary no identification needed obsolete this datasheet contains the design specifications for product development. Silicon planar epitaxial transistors bc635, 637, 639 npn bc636, 638, 640 pnp to92 plastic package electrical characteristics ta25. Npn silicon af transistors high current gain high collector current select the part name and then. This datasheet contains preliminary data, and supplementary data will be published at a later date. Type number1 package pnp complement nxp jeita jedec bc6352 sot54 sc43a to92 bc636 bcp54 sot223 sc73 bcp51 bcx54 sot89 sc62 to243 bcx51 table 2. Operating and storage junction temperature range tj, tstg. Dec 22, 2019 b1020 datasheet pdf storage storage proper storage until installed keep unit in a dry, temperature controlled area.
Bc635 transistors datasheet pdf encapsulate transistors. Bc635 bc637 bc639 bc636 bc638 bc640 collector emitter voltage 45 60 80 v collector base voltage 45 60 80v emitter base voltage 5. This datasheet contains the design specifications for. Bc847 series 45 v, 100 ma npn generalpurpose transistors rev. Bc635 datasheet, bc635 pdf, bc635 data sheet, bc635 manual, bc635 pdf, bc635, datenblatt, electronics bc635, alldatasheet, free, datasheet, datasheets, data sheet. These interrupts can be used to synchronize applications on the host computer as well as signal specific events. Bc635 datasheet pdf pinout silicon planar epitaxial. Bc635637639 npn epitaxial silicon transistor farnell. Specifications may change in any manner without notice. C operating and storage junction temperature range. Applications datasheet search, datasheets, datasheet search site for electronic components and semiconductors, integrated circuits, diodes and other semiconductors.
Bc635 datasheet, bc635 pdf, bc635 pinout, equivalent, replacement npn silicon epitaxial planar transistor semtech, schematic, circuit, manual. Elektronische bauelemente bc635 bc637 bc639 npn type plastic encapsulated transistor feature. The datasheet is printed for reference information only. Dc current gain vce 2 v 500 300 100 50 20 1 10 100 ic, collector current ma figure 3. Bc639 npn medium power transistors 1999 apr 23 product specification supersedes data of 1997 mar 12 philips semiconductors product specification npn medium power transistors bc635. Bc635637639 npn epitaxial silicon transistor created date. Bc635 45 collector to base voltage bc637 60 bc639 vcbo 100 v bc635 45 collector to emitter voltage bc637 60 bc639 vceo 80 v emitter to base voltage vebo 5 v continuous collector current ic 1 a collector power dissipation pc 830 mw junction, storage temperature tj, tstg 150, 65150 c. May 09, 2020 bu2525af datasheet pdf buaf transistor datasheet pdf, buaf equivalent. Bc636ta pnp epitaxial silicon transistor components datasheet pdf data sheet free from datasheet data sheet search for integrated circuits ic, semiconductors and other electronic components such as resistors, capacitors, transistors and diodes. Formative or in design first production full production.
Bc635 bc637 bc639 pd ta 25c pd tc 25c soa 1s pd tc 25c pd ta 25c 500 200 100 50 20 1 3 5 10 30 50 100 300 500 ic, collector current ma figure 2. Datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. Storage temperature v cer v ces v ceo v ebo ic icp ib p c t j t stg 45 60 100 45 60 100 45 60 80 5 1 1. All specifications subject to change without notice. Pure storage flasharrayx, the worlds first 100% allflash endtoend nvme and nvmeof array, now optionally includes a storage class memory boost to address the most demanding enterprise applications performance requirements. Tstg storage temperature range soldering temperature, for 10 seconds 300 1. Bc635 datasheet, bc635 pdf, bc635 pinout, equivalent, replacement silicon planar epitaxial transistors cdil, schematic, circuit, manual. Bc636638 640 pnp epitaxial silicon transistor switching and amplifier applications complement to bc635637639. Bcx54 45 v, 1 a npn medium power transistor series rev. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Bc637 high current npn transistors on semiconductor. Bc635, bc637, bc639, bc63916 high current transistors. Bc635637639 npn epitaxial silicon transistor mouser electronics.
Semiconductor data sheets andor specifications can and do vary in different applications and actual. Motorola order this document semiconductor technical data by bc635 d high current transistors bc635 npn silicon bc637 bc639 collector 2 3 base 1 emitter 1 maximum ratings 2 3 bc bc bc 635 637 639 rating symbol unit case 2904, style 14 to92 to226aa collectoremitter voltage vceo 45 60 80 vdc collectorbase voltage vcbo 45 60. Toshiba fet silicon n channel mos typefor high speed, high voltage switching, alldatasheet. St bc635 bc637 bc639 npn silicon epitaxial planar transistor medium power transistors for driver. The macromodel for the diamond transistor opa gives an example of thecharacteristics, while remaining simple enough to ensure fast simulations. Maximum ratings applied to the device are individual stress limit values not normal operating conditions and are not valid simultaneously. Bc637 datasheet, equivalent, cross reference search. Bc639 45 60 100 v v v vceo collectoremitter voltage. Time is acq u ir ed f om th gps sl ng a supplied antennareceiver bc637pmc only or from time code signals, typically irig b. Bc639 45 60 80 v v v vebo emitterbase voltage 5 v ic collector current 1 a icp peak collector current 1. Bc639 datasheet, bc639 pdf, bc639 data sheet, bc639 manual, bc639 pdf, bc639, datenblatt, electronics bc639, alldatasheet, free, datasheet, datasheets, data sheet. Pdf pic625 pic626 pic627 pic635 pic636 pic637 100khz transistor c635. Motorola order this document semiconductor technical data by bc635d high current transistors bc635 npn silicon bc637 bc639 collector 2 3 base 1 emitter 1 maximum ratings 2 3 bc bc bc 635 637 639 rating symbol unit case 2904, style 14 to92 to226aa collectoremitter voltage vceo 45 60 80 vdc collectorbase voltage vcbo 45 60 80 vdc emitterbase.